| VDSS | 600 | V |
| ID | 6 | A |
| PD(TC=25℃) | 85 | W |
| RDS(ON)Typ | 1.4 | Ω |
General Description：
CS6N60 A4H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤1.7Ω)
l Low Gate Charge (Typical Data: 19.5nC)
l Low Reverse transfer capacitances(Typical: 7.5pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
