C2383
—NPN silicon —
PARAMETER
SYMBOL
RATING
UNIT
Collector-base voltageVCBO160V
Collector-emitter voltageVCEO160V
Collector currentIC1A
Collector Power DissipationPC900mW
Junction TemperatureTJ150℃
Storage Temperature RangeTstg﹣55~150℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETERSYMBOLMIN.TYP.MAX.UNIT
TEST CONDITION DC Current Gain hFE60320VCE=5V，
Ic= 200mACollector Cut-off CurrentICBO1µAVCB=150V，
IE=0
Emitter Cut-off Current
IEBO1µAVEB=6V，
Ic=0
Collector-Base Breakdown VoltageBVCBO160V
Ic= 0.1mA，
IE=0
Collector-Emitter Breakdown Voltage
BVCEO160VIc= 10mA，
IB=0
Emitter-Base Breakdown VoltageBV
EBO6VIE=0.1mA，
Ic=0Base-Emitter VoltageVBE0.450.75VVCE=5V，
Ic= 5mACollector-Emitter Saturation VoltageV
CE(sat)1.5VIc= 500mA，
IB=50mAGain bandwidth productfT20100MHzIc= 200mA，
VCE=5VCommon Base Output CapacitanceCob20PFVCB=10V, IE=0, f = 1MHz
hFE60～120100～200160～320hFE
ClassificationClassification ROY
APPLICATION:
Color TV Audio Output Application.
Color TV Vertical Deflection Output Applications
